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SMT405R Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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SMT405R Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 4 page ![]() 16.06.2011 SMT405R 1 of 4 SMT405R TECHNICAL DATA Visible LED, SMT InGaN SMT405R is a InGaN LED mounted on the lead frame as TOP LED package, sealed with UV resistant resin for damp proof. On forward bias, it emits a radiation of typical 12.5 mW at a peak wavelength of 405 nm. Specifications • Structure: InGaN • Peak Wavelength: typ. 405 nm • Optical Output Power: typ. 12.5 mW • Package: PPA resin, UV resistant resin Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Power Dissipation PD 240 mW Forward Current IF 50 mA Pulse Forward Current** IFP 100 mA Reverse Voltage VR 5 V Operating Temperature Topr -20 … +80 °C Storage Temperature Tstg -30 … +80 °C Soldering Temperature * Tsol 255 °C * must be completed within 5 seconds ** max duty cycle 1%, max puls width 10µs (Unit: mm) Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Forward Voltage IF = 20 mA - 3.5 4.0 Pulse Forward Voltage VF IFP = 100 mA - 4.9 - V IF = 20 mA 6.0 12.5 - Total Radiated Power PO IFP = 100 mA - 50 - mW Radiation Intensity IE IF = 20 mA - 2.6 - mW/sr Brightness IV IF = 20 mA - 10 - mcd Peak Wavelength λ P IF = 20 mA 395 405 415 nm Half Width Δλ IF = 20 mA - 15 - nm Viewing Half Angle Θ 1/2 IF = 20 mA - ±55 - deg. Total Radiated Power is measured by S3584-08 Radiated Intensity is measured by Ando Optical Multi Meter AQ2140 & AQ2741 Brigthness is measured by Tektronix J-16 Notes • Do not view directly into the emitting area of the LED during operation! • The above specifications are for reference purpose only and subjected to change without prior notice. |
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