SP8076EL datasheet(2/8 Pages) SAMHOP

2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±10

VGS(th)

4.0

CISS

1660

COSS

498

CRSS

456

tD(ON)

tD(OFF)

VDS=10V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=15V

ID=13.5A

VGS=10V

RGEN= 4.7 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=13.5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

IDSS

Gate Threshold Voltage

VDS=VGS ,ID=0.3mA

VDS=33V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=-20V , ID=10mA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=6V,ID=13.5A

4.8

4.5

5.6

m ohm

f=1.0MHz

SP8076EL

Ver 1.4

www.samhop.com.tw

Sep,24,2014

VSD

Qgs

Qgd

9.5

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=24V,ID=13.5A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=27A

0.84

1.3

Notes

VDS=24V,ID=13.5A,VGS=10V

1.0

1.5

2.0

VGS=0V , ID=10mA

BVDSX

VGS=4.5V , ID=13.5A

5.5

6.9

m ohm

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Mounted on FR4 Board of 1 inch2 ,2oz.

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