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SP8601 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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SP8601 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() Suface Mount Package. S mHop Microelectronics C orp. a SP8601 Symbol VDS VGS IDM 85 W A PD °C 1.47 -55 to 150 ID Units Parameter 20 7.2 43 °C/W V V ±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 20V 7.2A 18.5 @ VGS=4.0V 17.5 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous c -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA Ver 2.5 www.samhop.com.tw Jul,18,2014 1 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Dual N-Channel Enhancement Mode Field Effect Transistor Green Product ESD Protected. 5.8 0.94 24.5 @ VGS=3.1V 27.0 @ VGS=2.5V 20.0 @ VGS=3.7V S1 G 1 S2 G 2 D1 D1 D2 D2 S mini 8 P P IIN N 1 1 c |
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Similar Description - SP8601 |
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