SP8608 datasheet(1/7 Pages) SAMHOP

Part #	SP8608

Description	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 7 page

S mHop Microelectronics C orp.

a

SP8608

Symbol

VDS

VGS

IDM

95

W

A

PD

°C

1.32

-55 to 150

ID

Units

Parameter

20

12

72

°C/W

V

±12

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

20V

12A

9.5 @ VGS=4.5V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Suface Mount Package.

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

c

-Pulsed

a

A

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

Ver 2.4

www.samhop.com.tw

Dec,09,2014

1

Details are subject to change without notice.

TA=25°C

ESD Protected.

TA=70°C

9.6

A

TA=70°C

0.84

W

Dual N-Channel Enhancement Mode Field Effect Transistor

Green

Product

9.8 @ VGS=4.0V

10.5 @ VGS=3.8V

4

3

2

1

D2

D1

G 2

S 2

G 1

S 1

5

6

7

8

S mini 8

P

P IIN

N 1

1

15.0 @ VGS=2.5V

12.5 @ VGS=3.1V

c

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