STBP438A datasheet(2/8 Pages) SAMHOP

2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±100

VGS(th)

6.8

gFS

VSD

CISS

1540

COSS

248

CRSS

180

Qgs

Qgd

tD(ON)

26.5

2.8

tD(OFF)

7.8

Gate-Drain Charge

VDS=20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=20V

ID=1A

VGS=10V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off DelayTime

VDS=20V,ID=25A,VGS=10V

Fall Time

Turn-On DelayTime

m ohm

VGS=10V , ID=30A

VDS=10V , ID=30A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body leakage current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=26A

8.5

8.1

m ohm

f=1.0MHz

VDS=20V,ID=25A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=2A

0.77

1.3

Notes

STB/P438A

www.samhop.com.tw

Aug,02,2010

1.8

12.5

VDS=20V,ID=25A,VGS=4.5V

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,VDD=20V,L=0.5mH.(See Figure13)

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