STBP454 datasheet(2/8 Pages) SAMHOP

2 / 8 page

4 Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±100

VGS(th)

3.6

gFS

111

VSD

CISS

3750

COSS

590

CRSS

500

103

Qgs

170

Qgd

tD(ON)

5.2

tD(OFF)

Gate-Drain Charge

VDS=20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=20V

ID=1A

VGS=10V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off DelayTime

VDS=20V,ID=25A,VGS=10V

Fall Time

Turn-On DelayTime

m ohm

VGS=10V , ID=40A

VDS=20V , ID=40A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body leakage current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

4.8

f=1.0MHz

VDS=20V,ID=25A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS=10A

0.79

1.3

Notes

STB/P454

www.samhop.com.tw

May,17,2013

a.Drain current limited by maximum junction temperature.

b.Guaranteed by design, not subject to production testing.

c.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)

VGS=4.5V , ID=31A

5.3

m ohm

7.2

VDS=20V,ID=25A,VGS=4.5V

Ver 1.1

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