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STF2455 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STF2455 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 6 page ![]() Suface Mount Package. S mHop Microelectronics C orp. a STF2455 Symbol VDS VGS IDM 70 W A PD °C 1.8 -55 to 150 ID Units Parameter 24 13 80 °C/W V V ±12 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 24V 13A 6.3 @ VGS=4.0V 6.2 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA Ver 1.0 www.samhop.com.tw Nov,09,2012 1 Details are subject to change without notice. a TA=25°C TA=70°C A TA=70°C W Green Product ESD Protected. 10.4 1.1 7.0 @ VGS=3.1V 8.5 @ VGS=2.5V 6.5 @ VGS=3.7V S G D (Bottom view) P IN 1 G S S D D D T DF N 2X 3 N-Channel Enhancement Mode Field Effect Transistor |
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Similar Description - STF2455 |
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