CMSSH-3E

CMSSH-3CE

CMSSH-3AE

CMSSH-3SE

ENHANCED SPECIFICATION

SURFACE MOUNT

SILICON SCHOTTKY DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMSSH-3E

Series types are Enhanced Versions of the

CMSSH-3 Series of Silicon Schottky Diodes in an

SOT-323 Surface Mount Package.

CMSSH-3E:

SINGLE

MARKING CODE: 31E

CMSSH-3AE: DUAL, COMMON ANODE

MARKING CODE: 3AE

CMSSH-3CE: DUAL, COMMON CATHODE

MARKING CODE: 3CE

CMSSH-3SE: DUAL, IN SERIES

MARKING CODE: 3SE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

Continuous Forward Current

IF

200

mA

Peak Repetitive Forward Current

IFRM

350

mA

Peak Forward Surge Current, tp=10ms

IFSM

750

mA

Power Dissipation

PD

250

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

500

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=25V

90

500

nA

IR

VR=25V, TA=100°C

25

100

μA

BVR

IR=100µA

40

50

V

VF

IF=2.0mA

0.29

0.33

V

VF

IF=15mA

0.37

0.42

V

VF

IF=100mA

0.61

0.80

V

VF

IF=200mA

0.65

1.0

V

CT

VR=1.0V, f=1.0MHz

7.0

pF

trr

IF=IR=10mA, Irr=1.0mA, RL=100Ω

5.0

ns

♦

♦

♦

♦

♦

♦♦

♦ Enhanced specification

♦♦ Additional Enhanced specification

SOT-323 CASE

FEATURED ENHANCED SPECIFICATIONS:

R2 (9-February 2010)

www.centr a lsemi.com