STM4884 datasheet(1/7 Pages) SAMHOP

Part #	STM4884

Description	Super high dense cell design for low RDS(ON).

PDF	7 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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SamHop Micrpelectronics Corp.

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m ) Typ

30V

13A

8.5 @VGS=4.5V

5.5 @VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Suface Mount Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Ver 3.2

www.samhop.com.tw

Mar,02,2011

1

Details are subject to change without notice.

STM4884

Gre

rr

P

Pr

P

P o

rr

SO-8

1

4

3

2

1

D

G

S

5

6

7

8

S

Symbol

VDS

VGS

IDM

EAS

50

W

A

PD

°C

2.5

-55 to 150

ID

Units

Parameter

30

13

52

°C/W

V

±20

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

45

mJ

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

-Pulsed

b

A

Sigle Pulse Avalanche Energy

d

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

a

TA=25°C

A

10.5

TA=70°C

W

1.6

TA=70°C

VDGR

30

V

Drain-Gate Voltage (RGS =20k

Ω)

IAR

13

A

Avalanche Current

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