MBD701 datasheet(1/2 Pages) LRC

Part #	MBD701

Description	Silicon Hot-Carrier Diodes

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

G18–1/2

1

3

2

MBD701

MMBD701LT1

MAXIMUM RATINGS (T J = 125°C unless otherwise noted)

MBD701

MMBD701LT1

Rating

Symbol

Value

Unit

Reverse Voltage

V R

70

Volts

Forward Power Dissipation

P F

@ T A = 25°C

280

200

mW

Derate above 25°C

2.8

2.0

mW/°C

Operating Junction

T J

°C

Temperature Range

–55 to +125

Storage Temperature Range

T stg

–55 to +150

°C

DEVICE MARKING

MMBD701LT1 = 5H

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

typ

M a x

Unit

Reverse Breakdown Voltage (I R = 10

µAdc)

V (BR)R

70

—

Volts

Total Capacitance (V R = 20 V, f = 1.0 MHz) Figure 1

C T

—

0.5

1.0

pF

Reverse Leakage (V R = 35 V) Figure 3

I R

—

9.0

200

nAdc

Forward Voltage (I F = 1.0 mAdc) Figure 4

V F

—

0.42

0.5

Vdc

Forward Voltage (I F = 10 mAdc) Figure 4

V F

—

0.7

1.0

Vdc

NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.

70 VOLTS

HIGH-VOLTAGE

SILICON HOT-CARRIER

DETECTOR AND SWITCHING

DIODES

CASE

318–08, STYLE8

SOT– 23 (TO–236AB)

3

CATHODE

1

ANODE

These devices are designed primarily for high–efficiency UHF

and VHF detector applications. They are readily adaptable to many

other fast switching RF and digital applications. They are supplied

in an inexpensive plastic package for low–cost,high–volume

consumer and industrial/commercial requirements. They are also

available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)

• Very Low Capacitance – 1.0 pF @ V R = 20 V

• High Reverse Voltage – to 70 Volts

• Low Reverse Leakage – 200 nA (Max)

Silicon Hot –Carrier Diodes

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