LESHAN RADIO COMPANY, LTD.

MBD110–1/5

1

3

2

Dual SCHOTTKY Barrier Diodes

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

MBD110DWT1

7.0

Vdc

MBD330DWT1

30

MBD770DWT1

70

Forward Power Dissipation

120

mW

Junction Temperature

–55 to +125

°C

Storage Temperature Range

–55 to +150

°C

DEVICE MARKING

MBD110DWT1 = M4

MBD330DWT1 = T4

MBD770DWT1 = H5

Thermal Clad is a trademark of the Bergquist Company.

6

4

5

SOT–363

CASE 419B–01, STYLE 6

MBD110DWT1

MBD330DWT1

MBD770DWT1

Application circuit designs are moving toward the consolidation of

device count and into smaller packages. The new SOT–363 package is

a solution which simplifies circuit design, reduces device count, and

reduces board space by putting two discrete devices in one small six–

leaded package. The SOT–363 is ideal for low–power surface mount

applications where board space is at a premium, such as portable

products.

12

3

Anode

N/C

Cathode

Cathode

N/C

Anode

65

4

Surface Mount Comparisons:

SOT–363

SOT–23

4.6

7.6

120

225

Device Count

2

1

Space Savings:

Package

1 × SOT–23

2 × SOT–23

SOT–363

40%

70%

The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular

MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed

for high–efficiency UHF and VHF detector applications. Readily available to many other

fast switching RF and digital applications.

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage