MMBT3906WT1 datasheet(1/9 Pages) LRC

Part #	MMBT3906WT1

Description	General Purpose Transistors(NPN and PNP Silicon)

PDF	9 Pages

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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1 / 9 page

LESHAN RADIO COMPANY, LTD.

K3–1/9

1

3

2

NPN

MMBT3904WT1

PNP

MMBT3906WT1

CASE 419–02, STYLE 3

SOT– 323 / SC–70

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

MMBT3904WT1

V CEO

40

Vdc

MMBT3906WT1

– 40

Collector–Base Voltage

MMBT3904WT1

V CBO

60

Vdc

MMBT3906WT1

– 40

Emitter–Base Voltage

MMBT3904WT1

V EBO

6.0

Vdc

MMBT3906WT1

– 5.0

Collector Current — Continuous

MMBT3904WT1

I C

200

mAdc

MMBT3906WT1

– 200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (1)

P D

150

mW

T A =25 °C

Thermal Resistance, Junction to Ambient

R θJA

833

°C/W

Junction and Storage Temperature

T J , T stg

–55 to +150

°C

DEVICE MARKING

MMBT3904WT1 = AM; MMBT3906WT1 = 2A

ELECTRICAL CHARACTERISTICS (T A = 2

5°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (2)

(I C = 1.0 mAdc, I B = 0)

MMBT3904WT1

V (BR)CEO

40

—

Vdc

(I C = –1.0 mAdc, I B = 0)

MMBT3906WT1

– 40

—

Collector–Base Breakdown Voltage

(I C = 10

µAdc, I

E = 0)

MMBT3904WT1

V(BR)CBO

60

—

Vdc

(I C = –10

µAdc, I

E = 0)

MMBT3906WT1

– 40

—

Emitter–Base Breakdown Voltage

(IE= 10

µAdc, I

C = 0)

MMBT3904WT1

V(BR)EBO

6.0

—

Vdc

(I E = –10

µAdc, I

C = 0)

MMBT3906WT1

– 5.0

—

Base Cutoff Current

(V CE = 30 Vdc, V EB = 3.0 Vdc)

MMBT3904WT1

I BL

—

50

nAdc

(V CE = –30 Vdc, V EB = –3.0 Vdc)

MMBT3906WT1

—

-50

Collector Cutoff Current

(V CE = 30 Vdc, V EB = 3.0 Vdc)

MMBT3904WT1

I CEX

—

50

nAdc

(V CE = –30 Vdc, V EB = –3.0 Vdc)

MMBT3906WT1

—

– 50

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.

2. Pulse Test: Pulse Width <300

µs; Duty Cycle <2.0%.

General Purpose Transistors

NPN and PNP Silicon

These transistors are designed for general purpose amplifier applications. They are housed

in the SOT–323/SC–70 which is designed for low power surface mount applications.

GENERAL PURPOSE

AMPLIFIER TRANSISTORS

SURFACE MOUNT

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