MMBT6517 datasheet(1/5 Pages) LRC

Part #	MMBT6517

Description	High Voltage Transistors(NPN Silicon)

PDF	5 Pages

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

M23–1/5

1

3

2

MMBT6517LT1

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

High Voltage Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

350

Vdc

Collector–Base Voltage

V CBO

350

Vdc

Emitter–Base Voltage

V EBO

5.0

Vdc

Base Current

I B

250

mAdc

Collector Current — Continuous

I C

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

DEVICE MARKING

MMBT6517LT1 = 1Z

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V (BR)CEO

350

—

Vdc

(I C = 1.0 mAdc )

Collector–Base Breakdown Voltage

V (BR)CBO

350

—

Vdc

(I C = 100

µAdc )

Emitter–Base Breakdown Voltage

V (BR)EBO

6.0

—

Vdc

(I E = 10

µAdc )

Collector Cutoff Current

I CBO

—

50

nAdc

( V CB = 250Vdc )

Emitter Cutoff Current

I EBO

—

50

nAdc

( V EB = 5.0Vdc )

2

EMITTER

3

COLLECTOR

1

BASE

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

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