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STS6308 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STS6308
Description  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS6308 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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STS6308
VGS= ±20V , VDS=0V
60
1
±100
1
66
7.5
950
52
40
15.7
12
21
18.5
VDS=25V,VGS=0V
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
VGS=10V , ID=3A
VDS=5V , ID=3A
VDS=48V , VGS=0V
VGS=0V , ID=250uA
VGS=4.5V , ID=2.6A
79
1.8
3
83
107
Symbol
Min
Typ
Max
Units
BVDSS
V
IGSS
nA
VGS(th)
V
gFS
S
CISS
pF
COSS
pF
CRSS
pF
tD(ON)
ns
tr
ns
tD(OFF)
ns
tf
ns
SWITCHING CHARACTERISTICS
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
Reverse Transfer Capacitance
ON CHARACTERISTICS
m ohm
c
c
15
Qg
nC
Total Gate Charge
VDS=30V,ID=3A,VGS=10V
www.samhop.com.tw
Jul,15,2010
2
1.8
3.5
nC
Qgs
nC
Qgd
Gate-Drain Charge
Gate-Source Charge
VDS=30V,ID=3A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS= 1A
0.795
VSD
Diode Forward Voltage
1.2
V
Notes
_
_
_
f=1.0MHz
VDS=VGS , ID=250uA
Ver 1.0
VDS=30V,ID=3A,VGS=4.5V
7
nC
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)



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