STS6409 datasheet(2/7 Pages) SAMHOP

2 / 7 page

Symbol

Min

Typ

Max

Units

BVDSS

-20

IGSS

±10

VGS(th)

-0.5

m ohm

VGS=-4.5V , ID=-2.0A

RDS(ON)

Drain-Source On-State Resistance

IDSS

Gate Threshold Voltage

VDS=VGS ,ID=-1mA

VDS=-16V , VGS=0V

VGS=±10V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=-250uA

ON CHARACTERISTICS

STS6409

Ver 1.0

-0.7

-1.5

gFS

VSD

CISS

613

COSS

159

CRSS

141

225

Qgs

1310

Qgd

605

tD(ON)

11.8

0.85

tD(OFF)

4.7

Gate-Drain Charge

VDS=-10V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-16V

ID=-2.0A

VGS=-4.5V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=-5V , ID=-2.0A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

Forward Transconductance

Diode Forward Voltage

Reverse Transfer Capacitance

VGS=-2.5V , ID=-2.0A

m ohm

f=1.0MHz

VDS=-16V,ID=-4.0A,

VGS=-4.5V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=-1.1A

-0.8

-1.2

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

c.Guaranteed by design, not subject to production testing.

www.samhop.com.tw

Aug,22,2012

VGS=-3.1V , ID=-2.0A

m ohm

VGS=-4.0V , ID=-2.0A

m ohm

VGS=-3.7V , ID=-2.0A

STS6409 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

STS6409 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL