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STS6604L Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STS6604L
Description  Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PDF  11 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS6604L Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
±100
nA
VGS(th)
0.5
V
40
gFS
S
CISS
224
pF
COSS
84
pF
CRSS
67
pF
Qg
8
nC
11.5
15.4
3.2
tD(ON)
5
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=10V
ID=1A
VGS=4.5V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=10V,ID=4A,VGS=4.5V
Fall Time
Turn-On Delay Time
m ohm
VGS=4.5V , ID=4A
VDS=5V , ID=4A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=16V , VGS=0V
VGS=±12V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
N-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
1.5
VGS=2.5V , ID=3.5A
60
50
75
m ohm
c
f=1.0MHz
c
STS6604L
www.samhop.com.tw
Jul,22,2010
2
0.74
nC
Qgs
nC
Qgd
0.85
2.4
Gate-Drain Charge
Gate-Source Charge
VDS=10V,ID=4A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
VGS=0V,IS=1.25A
0.81
1.2
V
b
15
Ver 1.0



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