STT08L01 datasheet(2/7 Pages) SAMHOP

2 / 7 page

Symbol

Min

Typ

Max

Units

BVDSS

100

IGSS

±100

VGS(th)

180

gFS

CISS

312

COSS

CRSS

9.1

14.8

3.7

tD(ON)

5.7

tD(OFF)

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=50V

ID=1A

VGS=10V

RGEN=6ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=1.25A

VDS=20V , ID=1.25A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

Gate Threshold Voltage

VDS=VGS ,ID=250uA

VDS=80V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=1A

225

265

360

m ohm

f=1.0MHz

STT08L01

Ver 1.2

www.samhop.com.tw

Jul,27,2011

Qgs

Qgd

1.1

1.8

Gate-Drain Charge

Gate-Source Charge

VDS=50V,ID=1.25A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

3.2

VDS=50V,ID=1.25A,VGS=10V

VDS=50V,ID=1.25A,VGS=4.5V

VSD

Diode Forward Voltage

VGS=0V,IS=1A

0.8

1.2

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)

1.9

2.5

2.3

STT08L01 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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