LESHAN RADIO COMPANY, LTD.

MBV109. MMBV109*. MV209*–1/2

1

3

2

Designed for general frequency control and tuning applications;

providing solid–state reliability in replacement of mechanical tuning

methods.

• High Q with Guaranteed Minimum Values at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Available in Surface Mount Package

Silicon Epicap Diode

3

CATHODE

1

ANODE

MAXIMUMRATINGS

Rating

Symbol

Value

Unit

MBV109T1

MMBV109LT1

MV209

Reverse Voltage

30

Vdc

Forward Current

200

mAdc

Device Dissipation

280

200

200

mW

Derate above 25°C

2.8

2.0

1.6

mW/°C

Junction Temperature

+125

°C

Storage Temperature Range

–55 to +150

°C

DEVICEMARKING

MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

30

—

—

Vdc

µ Adc)

Reverse Voltage Leakage Current

—

—

0.1

mAdc

Diode Capacitance Temperature Coefficient

—

300

—

ppm/°C

Device Type

Min

Nom

Max

Min

Min

Max

MBV109T1, MMBV109LT1, MV209

26

29

32

200

5.0

6.5

MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.

p F

Q, Figure of

Merit

f = 50MHz

Ratio

f=1.0MHz (Note 1)

MMBV109LT1

MBV109T1

MV209

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

26–32 pF

VOLTAGE VARIABLE

CAPACITANCE DIODES