STT600 datasheet(2/7 Pages) SAMHOP

2 / 7 page

Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±10

VGS(th)

480

gFS

CISS

170

COSS

CRSS

14.5

11.5

172

tD(ON)

3.2

tD(OFF)

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=45V

ID=0.7A

VGS=10V

RGEN= 6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=0.7A

VDS=10V , ID=0.7A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=72V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=0.65A

600

525

708

m ohm

f=1.0MHz

STT600

www.samhop.com.tw

Apr,16,2013

Qgs

Qgd

0.65

0.9

Gate-Drain Charge

Gate-Source Charge

VDS=45V,ID=0.7A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

1.8

VDS=45V,ID=0.7A,VGS=10V

VDS=45V,ID=0.7A,VGS=4.5V

VSD

Diode Forward Voltage

VGS=0V,IS=0.7A

0.87

1.3

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13)

e.Drain current limited by maximum junction temperature.

11.7

2.5

Ver 3.0

STT600 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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