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STT3418 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STT3418 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() S mHop Microelectronics C orp. a STT3418 Symbol VDS VGS IDM A ID Units Parameter 30 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 30V 5A 63 @ VGS=4.5V 39 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A Ver 1.0 www.samhop.com.tw Nov,22,2012 1 Details are subject to change without notice. W PD °C -55 to 150 TA=25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG TA=70°C A EAS mJ Single Pulse Avalanche Energy d TA=70°C W a a 12 5 20 3 Green Product 4 1.9 G D S 42 °C/W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA a TA=25°C G S STT SERIES SOT-223 D D |
Similar Part No. - STT3418 |
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Similar Description - STT3418 |
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