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2N6533 Datasheet(PDF) 2 Page - Central Semiconductor Corp |
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2N6533 Datasheet(HTML) 2 Page - Central Semiconductor Corp |
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2 / 3 page ![]() 2N6530 SERIES NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) 2N6530 2N6531 2N6532 2N6533 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS hFE VCE=3.0V, IC=3.0A 500 10K 1K 10K hFE VCE=3.0V, IC=5.0A 1K 10K 1K 10K hFE VCE=3.0V, IC=8.0A 100 5K 100 5K 100 5K 100 5K VF IC=10A 2.8 2.8 2.8 2.8 V hfe VCE=5.0V, IC=1.0A, f=1.0kHz 1K 1K 1K 1K |hfe| VCE=5.0V, IC=1.0A, f=1.0MHz 20 20 20 20 Cob VCB=10V, IE=0, f=1.0MHz 200 200 200 200 pF IS/b VCE=24V, t=0.5s nonrep. 2.7 2.7 2.7 2.7 A ES/b VEB=1.5V, IC=4.5A, 120 120 120 120 mJ RBE=100Ω, L=12mH JEDEC TO-220 CASE - MECHANICAL OUTLINE Lead Code: 1) Base 2) Collector 3) Emitter MIN MAX MIN MAX A 0.176 0.190 4.48 4.82 B 0.045 0.055 1.15 1.39 C 0.014 0.026 0.35 0.65 D 0.083 0.106 2.10 2.70 E 0.394 0.417 10.01 10.60 F (DIA) 0.140 0.157 3.55 4.00 G 0.100 0.118 2.54 3.00 H 0.230 0.270 5.85 6.85 I 0.560 0.625 14.23 15.87 J - 0.250 - 6.35 K 0.025 0.038 0.64 0.96 L 0.500 0.579 12.70 14.70 M 0.090 0.110 2.29 2.79 TO-220 (REV: R1) DIMENSIONS SYMBOL INCHES MILLIMETERS 3 2 1 R1 J K M L I H F G E C D A B |
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