MMVL3102T1 datasheet(1/2 Pages) LRC

Part #	MMVL3102T1

Description	Silicon Tuning Diode

PDF	2 Pages

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

MMVL3102T1–1/2

PLASTIC, CASE 477

SOD– 323

1

2

ANODE

1

CATHODE

MAXIMUM RATINGS

Symbol

Rating

Value

Unit

VR

Continuous Reverse Voltage

30

Vdc

IF

Peak Forward Current

200

mAdc

THERMALCHARACTERISTICS

Symbol

Characteristic

Max

Unit

PD

Total Device Dissipation FR–5 Board,*

200

mW

TA = 25°C

Derate above 25°C

1.57

mW/°C

RθJA

Thermal Resistance Junction to Ambient

635

°C/W

TJ, Tstg

Junction and Storage Temperature

150

°C

*FR–4 Minimum Pad

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse BreakdownVoltage

V(BR)R

30

—

Vdc

(IR = 10

µAdc)

Rev

erse Voltage Leakage Current

IR

—

0.1

µAdc

(VR = 25 Vdc, TA = 25°C)

Diode Capacitance Temperature Coefficient

TCC

—

300

—

ppm/°C

(VR = 4.0 Vdc, f = 1.0 MHz)

Ct, Diode Capacitance

Q, Figure of Merit

CR, Capacitance Ratio

VR = 3.0 Vdc, f = 1.0 MHz

VR = 3.0 Vdc

C3/C25

pF

f = 50 MHz

f = 1.0 MHz

Device

Min

Nom

Max

Min

Max

MMVL3102T1

20

22

25

200

4.5

4.8

This device is designed in the Surface Mount package for general

frequency control and tuning applications. It provides solid–state reliability

in replacement of mechanical tuning methods.

• High Q with Guaranteed Minimum Values at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Device Marking: 4C

MMVL3102T1

22 pF (Nominal) 30 VOLTS

VOLTAGEVARIABLE

CAPACITANCEDIODE

Silicon Tuning Diode

ORDERING INFORMATION

Device

Package

Shipping

MMVL3102T1

SOD–323

3000 / Tape & Reel

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