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STU601S Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STU601S Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() S mHop Microelectronics C orp. a STU601S PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max -60V -15A 125 @ VGS=-4.5V 95 @ VGS=-10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. P-Channel Logic Level Enhancement Mode Field Effect Transistor www.samhop.com.tw Nov,16,2011 1 Details are subject to change without notice. G G S S STU SERIES TO - 252AA( D- PAK ) Ver 2.0 Symbol VDS VGS IDM EAS W A PD °C 27 -55 to 150 ID Units Parameter -60 -15 -45 V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS mJ ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA TC=25°C 3 °C/W Thermal Resistance, Junction-to-Case R JC A TC=70°C -12 TC=70°C W 42 a a 36 r P Pr P P ESD Protected. |
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