STUD303S datasheet(1/8 Pages) SAMHOP

Part #	STUD303S

Description	S uper high dense cell design for low R DS (ON).

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

Parameter

S ymbol

Limit

Unit

Drain-S ource Voltage

VDS

V

Gate-S ource Voltage

VGS

20

V

Drain Current-Continuous @ Tc=25 C

-Pulsed

ID

-24

-96

-20

50

A

W

IDM

Drain-S ource Diode Forward Current

IS

Maximum Power Dissipation

PD

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 175

C

THE R MAL CHAR ACTE R IS TICS

a

1

N

2007

S amHop Microelectronics C orp.

P R ODUC T S UMMAR Y

V DS S

ID

-24A

28 @ V GS = -10V

40 @ V GS = -4.5V

-30V

S TU/D303S

S TU S E R IE S

TO-252AA(D-PAK)

S TD S E R IE S

TO-251(l-PAK)

G

S

D

Thermal R esistance, Junction-to-Case

Thermal R esistance, Junction-to-Ambient

R JC

3

50

R JA

/W

C

/W

C

P-Channel E nhancement Mode Field E ffect Transistor

@ Tc=25 C

ov,16,

S urface Mount Package.

F E AT UR E S

S uper high dense cell design for low R DS(ON).

R ugged and reliable.

E S D Procteced

S

G

D

RDS(ON) (mW

) Max

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