STUD330S datasheet(1/8 Pages) SAMHOP

Part #	STUD330S

Description	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 8 page

S mHop Microelectronics C orp.

a

STU/D330S

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

30V

20A

38

@

VGS=4.5V

28

@

VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Suface Mount Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Ver 1.0

www.samhop.com.tw

Sep,03,2008

1

Details are subject to change without notice.

G

S

STU SERIES

TO - 252AA( D- PAK )

G

S

D

STD SERIES

TO - 251( I - PAK )

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

30

20

80

V

±20

Gate-Source Voltage

Drain-Source Voltage

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

TC=25°C

W

PD

°C

21

-55 to 150

TC=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

50

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

6

°C/W

Thermal Resistance, Junction-to-Case

R JC

TC=70°C

A

EAS

mJ

Sigle Pulse Avalanche Energy

d

TC=70°C

W

a

16.3

8.8

13.3

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