STUD410S datasheet(3/8 Pages) SAMHOP

Part #	STUD410S

Description	S uper high dense cell design for low R DS (ON).

PDF	8 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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3 / 8 page

Parameter

Symbol

C ondition

Min Typ Max Unit

ELEC TR IC AL C HAR AC TE R ISTIC S (TC=25 C unless otherwise noted)

DR AIN-S OUR CE DIODE C HAR ACTE R IS TICS

Diode Forward Voltage

VSD

VGS =0V, Is =8A

Notes

b.Guaranteed by design, not subject to production testing.

a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

F igure 2. Trans fer C haracteris tics

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

ID, Drain C urrent (A)

V GS , G ate-to-S ource Voltage (V )

S T U/D410S

1.75

1.60

1.45

1.30

1.15

1.0

0.8

-25

150

0.84

Tj( C )

125

100

V GS =10V

ID=10A

T j, J unction T empera ture ( C )

F igure 3. On-R es is tance vs . Drain C urrent

and G ate V oltage

V GS =4.5V

ID=8A

F igure 1. Output C haracteris tics

V DS ,Drain-to-S ource Voltage (V )

0.8

1.6

3.2

4.8

25 C

1.3

2.4

4.0

-55 C

0.5

1.0

1.5

2.0

2.5

3.0

V GS =10V

V GS =3V

V GS =3.5V

V GS =4V

V GS =4.5V

V GS =10V

Tj=125 C

V GS =4.5V

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