MPSA76 datasheet(1/3 Pages) CENTRAL

Part #	MPSA76

Description	SILICON PNP DARLINGTON TRANSISTORS

PDF	3 Pages

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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MPSA75

MPSA76

MPSA77

SILICON

PNP DARLINGTON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPSA75 series

devices are silicon PNP Darlington transistors,

manufactured by the epitaxial planar process, designed

for applications requiring extremely high gain.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

MPSA75

MPSA76

MPSA77

UNITS

Collector-Base Voltage

VCBO

40

50

60

V

Collector-Emitter Voltage

VCES

40

50

60

V

Emitter-Base Voltage

VEBO

10

V

Continuous Collector Current

IC

500

mA

Power Dissipation

PD

625

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

JA

200

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C)

MPSA75

MPSA76

MPSA77

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=30V

-

100

-

nA

ICBO

VCB=40V

-

100

-

nA

ICBO

VCB=50V

-

100

nA

ICES

VCE=30V

-

500

-

nA

ICES

VCB=40V

-

500

-

nA

ICES

VCB=50V

-

500

nA

IEBO

VEB=10V

-

100

-

100

-

100

nA

BVCBO

IC=100μA

40

-

50

-

60

-

V

BVCES

IC=100μA

40

-

50

-

60

-

V

VCE(SAT)

IC=100mA, IB=0.1mA

-

1.5

-

1.5

-

1.5

V

VBE(ON)

VCE=5.0V, IB=100mA

-

2.0

-

2.0

-

2.0

V

hFE

VCE=5.0V, IC=10mA

10K

-

10K

-

10K

-

hFE

VCE=5.0V, IC=100mA

10K

-

10K

-

10K

-

fT

VCE=5.0V, IC=10mA

125

-

125

-

125

-

MHz

R1 (18-March 2014)

www.centr a lsemi.com

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