PMD16K60

PMD16K80

PMD16K100

MAXIMUM RATINGS: (TC=25°C)

SYMBOL PMD17K60

PMD17K80

PMD17K100 UNITS

Collector-Base Voltage

VCBO

60

80

100

V

Collector-Emitter Voltage

VCEO

60

80

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

20

A

Peak Collector Current

ICM

40

A

Continuous Base Current

IB

500

mA

Power Dissipation

PD

200

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JC

0.875

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICER

VCE=Rated VCEO, RBE=1.0kΩ

1.0

mA

ICER

VCE=Rated VCEO, RBE=1.0kΩ, TC=150°C

5.0

mA

IEBO

VEB=5.0V

2.0

mA

BVCEO

IC=100mA (PMD16K60, 17K60)

60

V

BVCEO

IC=100mA (PMD16K80, 17K80)

80

V

BVCEO

IC=100mA (PMD16K100, 17K100)

100

V

VCE(SAT) IC=10A, IB=40mA

2.0

V

VBE(SAT) IC=10A, IB=40mA

2.8

V

VBE(ON)

VCE=3.0V, IC=10A

2.8

V

hFE

VCE=3.0V, IC=10A (PMD16K series)

1.0K

20K

hFE

VCE=3.0V, IC=10A (PMD17K series)

800

20K

hfe

VCE=3.0V, IC=7.0A, f=1.0kHz

300

fT

VCE=3.0V, IC=7.0A, f=1.0MHz

4.0

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

400

pF

PMD16K SERIES

NPN

PMD17K SERIES

PNP

COMPLEMENTARY SILICON

DARLINGTON POWER

TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR PMD16K, PMD17K

series types are complementary silicon Darlington power

transistors, manufactured by the epitaxial base process,

mounted in a hermetically sealed metal package, and

designed for power switching applications.

MARKING: FULL PART NUMBER

TO-3 CASE

R1 (26-November 2012)

www.centr a lsemi.com