STUD449S datasheet(2/8 Pages) SAMHOP

2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

-40

IGSS

±100

VGS(th)

-2

gFS

CISS

900

COSS

115

CRSS

Qgs

Qgd

tD(ON)

2.5

tD(OFF)

5.5

Gate-Drain Charge

VDS=-20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-20V

ID=-1A

VGS=-10V

RGEN=6ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=-20V,ID=-12A,VGS=-10V

Fall Time

Turn-On Delay Time

m ohm

VGS=-10V , ID=-12A

VDS=-10V , ID=-12A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

Gate Threshold Voltage

VDS=VGS ,ID=-250uA

VDS=-32V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=-4.5V , ID=-9A

m ohm

f=1.0MHz

VDS=-20V,ID=-12A,

VGS=-10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

www.samhop.com.tw

Apr,01,2010

VDS=-20V,ID=-12A,VGS=-4.5V

9.5

-2.5

-4

VSD

Diode Forward Voltage

VGS=0V,IS= -2A

-0.8

-1.3

STU/D449S

Ver 1.0

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = -20V.(See Figure13)

STUD449S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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