2N3789

2N3791

2N3790

2N3792

SILICON

PNP POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,

2N3791, and 2N3792 are silicon PNP power transistors,

manufactured by the epitaxial planar process, designed

for medium speed switching and amplifier applications.

MARKING: FULL PART NUMBER

2N3789

2N3790

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N3791

2N3792

UNITS

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

10

A

Continuous Base Current

IB

4.0

A

Power Dissipation

PD

150

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JC

1.17

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

2N3789

2N3790

2N3791

2N3792

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=Rated VCEO, VEB=1.5V

-

1.0

-

1.0

mA

ICEV

VCE=Rated VCEO, VEB=1.5V, TC=150°C

-

5.0

-

5.0

mA

IEBO

VEB=7.0V

-

5.0

-

5.0

mA

BVCEO

IC=200mA

60

-

80

-

V

VCE(SAT) IC=4.0A, IB=400mA (2N3789, 2N3790)

-

1.0

-

1.0

V

VCE(SAT) IC=5.0A, IB=500mA (2N3791, 2N3792)

-

1.0

-

1.0

V

VBE(ON)

VCE=2.0V, IC=5.0A (2N3789, 2N3790)

-

2.0

-

2.0

V

VBE(ON)

VCE=2.0V, IC=5.0A (2N3791, 2N3792)

-

1.8

-

1.8

V

VBE(ON)

VCE=4.0V, IC=10A

-

4.0

-

4.0

V

hFE

VCE=2.0V, IC=1.0A (2N3789, 2N3790)

25

90

25

90

hFE

VCE=2.0V, IC=1.0A (2N3791, 2N3792)

50

180

50

180

hFE

VCE=2.0V, IC=3.0A (2N3789, 2N3790)

15

-

15

-

hFE

VCE=2.0V, IC=3.0A (2N3791, 2N3792)

30

-

30

-

fT

VCE=10V, IC=500mA, f=1.0MHz

4.0

-

4.0

-

MHz

TO-3 CASE

R2 (31-July 2013)

www.centr a lsemi.com