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PT511B Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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PT511B Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 2 page ![]() 23.11.2011 PT511B 1 of 2 PT511B TECHNICAL DATA TO-Can PIN Photodiode Ball Lens PT511B is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with ball lens. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Value Unit Reverse Voltage UR 1000 V Reverse current IR 500 µA Forward current IF 1000 mA Power Dissipation PD 100 mW Operating Temperature Topr -40 … +85 °C Storage Temperature Tstg -40 … +125 °C Soldering Temperature (max. 10 s) Tsol 260 °C Specifications (Ta=25°C) Item Value Unit Sensitive Area Ø 300 µm Spectral Response Range Normal 1000 .. 1650 Nm Broad 650 .. 1650 Nm Responsivity (0 V) λ=850 nm ≥0.20 A/W λ=1310 nm ≥0.75 A/W λ=1550 nm ≥0.80 A/W Linear Range (0 V) - -70 .. +10 dBm - -55 .. +25 dBm - -40 .. +30 dBm Capacitance (-5 V) ≤12 pF Dark Current (-5 V) ≤5 nA Operating Voltage 0 .. -10 V Linearity - dB Splicing Deviation ±0.1 Db Splicing Life 10 5 Time Highest Unsaturated Power - dBm |
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