© Won-Top Electronics Co., Ltd.

www.wontop.com

Revision: April, 2012

1

Pb

Features



Diffused Junction



Low Leakage

D



Low Cost

Anode

+



High Surge Current Capability

C



Die Size 184 mil HEX

E

Mechanical Data

B



Case: Cell Diode Passivated with Silicon Rubber



Terminal: Copper Disc with Ag Plated



Polarity: Indicated by Large Disc On Cathode

Side, Add “R” Suffix to Indicate Reverse Polarity,

i.e. C3520R



Mounting Position: Any

A



Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

C3520

C3524

C3536

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

16

20

32

V

Average Rectified Output Current

35

A

Breakdown Voltage Min.

Breakdown Voltage Max.

20

26

24

32

36

42

V

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

400

A

Forward Voltage

1.08

V

Peak Reverse Current

At Rated DC Blocking Voltage

200

nA

Typical Thermal Resistance Junction to Ambient

1.4

°C/W

Operating and Storage Temperature Range

-40 to +150

°C

C3520, C3524, C3536

35A AVALANCHE AUTOMOTIVE CELL DIODE

WON-TOP ELECTRONICS

®

C35

Dim

Min

Max

A

—

6.40

B

—

5.46

C

0.75

—

D

1.0

—

E

—

2.2

All Dimensions in mm