2N4237

2N4238

2N4239

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4237, 2N4238,

and 2N4239 are silicon NPN transistors mounted in

a hermetically sealed metal case, designed for power

amplifier, power driver, and switching power supply

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

2N4237 2N4238

2N4239

UNITS

Collector-Base Voltage

VCBO

50

80

100

V

Collector-Emitter Voltage

VCEO

40

60

80

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

3.0

A

Continuous Base Current

IB

0.5

A

Power Dissipation

PD

6.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

29.2

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=Rated VCBO

100

μA

ICEV

VCE=45V, VEB=1.5V (2N4237)

100

μA

ICEV

VCE=75V, VEB=1.5V (2N4238)

100

μA

ICEV

VCE=90V, VEB=1.5V (2N4239)

100

μA

ICEV

VCE=30V, VEB=1.5V, TC=150°C (2N4237)

1.0

mA

ICEV

VCE=50V, VEB=1.5V, TC=150°C (2N4238)

1.0

mA

ICEV

VCE=70V, VEB=1.5V, TC=150°C (2N4239)

1.0

mA

ICEO

VCE=Rated VCEO

700

μA

IEBO

VEB=6.0V

500

μA

BVCEO

IC=100mA (2N4237)

40

V

BVCEO

IC=100mA (2N4238)

60

V

BVCEO

IC=100mA (2N4239)

80

V

VCE(SAT)

IC=500mA, IB=50mA

0.3

V

VCE(SAT)

IC=1.0A, IB=0.1A

0.6

V

VBE(SAT)

IC=1.0A, IB=0.1A

1.5

V

VBE(ON)

VCE=1.0V, IC=250mA

1.0

V

TO-39 CASE

R3 (26-March 2015)

www.centr a lsemi.com