2N4231A 2N4232A 2N4233A

MAXIMUM RATINGS: (TC=25°C)

SYMBOL 2N6312

2N6313

2N6314

UNITS

Collector-Base Voltage

VCBO

40

60

80

V

Collector-Emitter Voltage

VCEO

40

60

80

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

5.0

A

Peak Collector Current

ICM

10

A

Continuous Base Current

IB

2.0

A

Power Dissipation

PD

75

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JC

2.32

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=Rated VCBO

50

μA

ICEO

VCE=30V (2N4231A, 2N6312)

1.0

mA

ICEO

VCE=50V (2N4232A, 2N6313)

1.0

mA

ICEO

VCE=70V (2N4233A, 2N6314)

1.0

mA

ICEV

VCE=Rated VCEO, VBE=1.5V

0.1

mA

ICEV

VCE=Rated VCEO, VBE=1.5V, TC=150°C

1.0

mA

IEBO

VEB=5.0V

0.5

mA

BVCEO

IC=100mA, (2N4231A, 2N6312)

40

V

BVCEO

IC=100mA, (2N4232A, 2N6313)

60

V

BVCEO

IC=100mA, (2N4233A, 2N6314)

80

V

VCE(SAT) IC=1.5A, IB=0.15A

0.7

V

VCE(SAT) IC=3.0A, IB=0.3A

2.0

V

VCE(SAT) IC=5.0A, IB=1.25A

4.0

V

VBE(ON)

VCE=2.0V, IC=1.5A

1.4

V

hFE

VCE=2.0V, IC=0.5A

40

hFE

VCE=2.0V, IC=1.5A

25

100

hFE

VCE=2.0V, IC=3.0A

10

hFE

VCE=4.0V, IC=5.0A

4.0

hfe

VCE=10V, IC=0.5A, f=1.0kHz

20

fT

VCE=10V, IC=0.5A, f=1.0MHz

4.0

MHz

Cob

VCB=10V, IE=0, f=100kHz

300

pF

2N4231A 2N4232A 2N4233A

NPN

2N6312

2N6313

2N6314

PNP

COMPLEMENTARY

SILICON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312

series devices are complementary silicon power

transistors, manufactured by the epitaxial base process,

designed for general purpose amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R1 (2-September 2014)

www.centr a lsemi.com