BCX70 SERIES

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX70 Series

types are NPN Silicon Transistors manufactured

by the epitaxial planar process, epoxy molded in a

surface mount package, designed for general purpose

switching and amplifier applications.

MARKING CODES: BCX70G: AG

BCX70H: AH

BCX70J: AJ

BCX70K: AK

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

45

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

100

mA

Peak Collector Current

ICM

200

mA

Peak Base Current

IBM

200

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=45V

20

nA

ICBO

VCB=45V, TA=150°C

20

μA

IEBO

VEB=4.0V

20

nA

BVCBO

IC=10μA

45

V

BVCEO

IC=10mA

45

V

BVEBO

IE=1.0μA

5.0

V

VCE(SAT)

IC=10mA, IB=250μA

0.05

0.35

V

VCE(SAT)

IC=50mA, IB=1.25mA

0.10

0.55

V

VBE(SAT)

IC=10mA, IB=250μA

0.60

0.85

V

VBE(SAT)

IC=50mA, IB=1.25mA

0.70

1.05

V

VBE(ON)

VCE=5.0V, IC=2.0mA

0.55

0.75

V

fT

VCE=5.0V, IC=10mA, f=100MHz

100

250

MHz

Cc

VCB=10V, IE=0, f=1.0MHz

1.7

pF

Ce

VEB=0.5V, IC=0, f=1.0MHz

11

pF

NF

VCE=5.0V, IC=200μA, RS=2.0kΩ,

f=1.0kHz, BW=200Hz

6.0

dB

BCX70G

BCX70H

BCX70J

BCX70K

MIN

MAX

MIN

MAX

MIN MAX

MIN MAX

hFE

VCE=5.0V, IC=10μA

40

30

100

hFE

VCE=5.0V, IC=2.0mA

120

220

180

310

250

460

380

630

hFE

VCE=1.0V, IC=50mA

50

70

90

100

SOT-23 CASE

R2 (20-November 2009)

www.centra lsemi.com