CJD47

CJD50

SURFACE MOUNT SILICON

NPN POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD47 and CJD50

are silicon NPN power transistors manufactured in

a surface mount package, and designed for high

voltage applications such as power supplies and other

switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

CJD47

CJD50

UNITS

Collector-Base Voltage

VCBO

350

500

V

Collector-Emitter Voltage

VCEO

250

400

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

2.0

A

Continuous Base Current

IB

600

mA

Power Dissipation

PD

15

W

Power Dissipation (TA=25°C)

PD

1.56

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

8.33

°C/W

Thermal Resistance

ΘJA

80.1

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEO

VCE=150V (CJD47)

200

μA

ICEO

VCE=300V (CJD50)

200

μA

ICES

VCE=350V (CJD47)

100

μA

ICES

VCE=500V (CJD50)

100

μA

IEBO

VEB=5.0V

1.0

mA

BVCEO

IC=30mA (CJD47)

250

V

BVCEO

IC=30mA (CJD50)

400

V

VCE(SAT)

IC=1.0A, IB=200mA

1.0

V

VBE(ON)

VCE=10V, IC=1.0A

1.5

V

hFE

VCE=10V, IC=300mA

30

150

hFE

VCE=10V, IC=1.0A

10

fT

VCE=10V, IC=200mA, f=2.0MHz

10

MHz

hfe

VCE=10V, IC=200mA, f=1.0kHz

25

R3 (21-January 2013)

DPAK CASE

www.centr a lsemi.com