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HFP2N90 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd.

Part # HFP2N90
Description  Superior Avalanche Rugged Technology
PDF  8 Pages
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Manufacturer  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

HFP2N90 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd.

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2
1
3
BV
DSS = 900 V
R
DS(on) typ
I
D = 2.2 A
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 17 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
GS=10V
100% Avalanche Tested
Thermal Resistance Characteristics
FEATURES
Absolute Maximum Ratings
T
C=25
unless otherwise specified
TO-220
1.Gate 2. Drain 3. Source
HFP2N90
900V N-Channel MOSFET
Symbol
Parameter
Value
Units
V
DSS
Drain-Source Voltage
900
V
I
D
Drain Current
– Continuous (T
C = 25
2.2
A
Drain Current
– Continuous (T
C = 100
1.4
A
I
DM
Drain Current
– Pulsed
(Note 1)
8.8
A
V
GS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
170
mJ
I
AR
Avalanche Current
(Note 1)
2.2
A
E
AR
Repetitive Avalanche Energy
(Note 1)
10.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C = 25
107
W
0.85
W/
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
Symbol
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
--
1.17
R
CS
Case-to-Sink
0.5
--
R
JA
Junction-to-Ambient
--
62.5
Feb 2014


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