HFP4N90 datasheet(3/8 Pages) SEMIHOW

Part #	HFP4N90

Description	Superior Avalanche Rugged Technology

PDF	8 Pages

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

Direct Link	http://www.semihow.com

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3 / 8 page

GS, Gate-Source Voltage [V]

SD, Source-Drain voltage [V]

-1

400

800

1200

1600

2000

2400

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Typical Characteristics

DS = 450V

DS = 180V

DS = 720V

* Note : I

D = 4.0A

G, Total Gate Charge [nC]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS, Drain-Source Voltage [V]

024

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

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