2

1

3

BV

R

DS(on) typ

I

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 17 nC (Typ.)

Extended Safe Operating Area

Lower R

DS(ON)

100% Avalanche Tested

Thermal Resistance Characteristics

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HFS2N90

900V N-Channel MOSFET

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

900

V

I

D

Drain Current

– Continuous (T

2.2*

A

Drain Current

– Continuous (T

1.4*

A

I

DM

Drain Current

– Pulsed

(Note 1)

8.8*

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

170

mJ

I

AR

Avalanche Current

(Note 1)

2.2

A

E

AR

Repetitive Avalanche Energy

(Note 1)

10.7

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

39

W

0.31

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

3.2

R

JA

Junction-to-Ambient

--

62.5

Feb 2014

TO-220F

1.Gate 2. Drain 3. Source

1

* Drain current limited by maximum junction temperature