C unless otherwise specified

Symbol

Parameter

Test Conditions

Min

TypMax

Units

y

y

V

GS

Gate Threshold Voltage

V

2.5

--

4.5

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

1.55

1.9

On Characteristics

BV

Di S

B

kd

V lt

V

0V I

250

800

V

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

800

--

--

V

BV

DSS

/ T

J

Breakdown Voltage Temperature

Coefficient

I

--

0.93

--

I

DSS

Zero Gate Voltage Drain Current

V

--

--

1

V

--

--

10

I

GSSF

Gate-Body Leakage Current,

Forward

V

--

--

100

I

Gt Bd L

k

C

t

I

GSSR

Gate-Body Leakage Current,

Reverse

V

--

--

-100

C

iss

Input Capacitance

V

f = 1.0 MHz

--

1500

1950

C

oss

Output Capacitance

--

120

155

C

rss

Reverse Transfer Capacitance

--

18

24

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

--

40

80

t

r

Turn-On Rise Time

--

120

240

t

d(off)

Turn-Off Delay Time

--

60

120

t

f

Turn-Off Fall Time

--

70

140

Q

g

Total Gate Charge

V

--

35

45

Switching Characteristics

I

S

Continuous Source-Drain Diode Forward Current

--

--

8.0

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

32

V

SD

Source-Drain Diode Forward Voltage

I

--

--

14

V

DS

D

V

Q

gs

Gate-Source Charge

--

10

--

Q

gd

Gate-Drain Charge

--

13

--

Source-Drain Diode Maximum Ratings and Characteristics

Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=22.2mH, I

, Starting T

3. I

C

4P l

T

t P l

Width

300

D t C

l

2%

V

SD

Source Drain Diode Forward Voltage

I

S

8.0 A, V

GS

0 V

1.4

V

trr

Reverse Recovery Time

I

di

(Note 4)

--

780

--

Qrr

Reverse Recovery Charge

--

9.0

--

C

4. Pulse Test : Pulse Width

300 s, Duty Cycle

2%

5. Essentially Independent of Operating Temperature