CMLT3904E CMLT3904EG* NPN

CMLT3906E CMLT3906EG* PNP

CMLT3946E CMLT3946EG* NPN/PNP

ENHANCED SPECIFICATION

SURFACE MOUNT SILICON

COMPLEMENTARY TRANSISTORS

SOT-563 CASE - MECHANICAL OUTLINE

ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

fT

VCE=20V, IC=10mA, f=100MHz

300

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

4.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

8.0

pF

hie

VCE=10V, IC=1.0mA, f=1.0kHz

1.0

12

kΩ

hre

VCE=10V, IC=1.0mA, f=1.0kHz

0.1

10

hfe

VCE=10V, IC=1.0mA, f=1.0kHz

100

400

hoe

VCE=10V, IC=1.0mA, f=1.0kHz

1.0

60

μS

NF

VCE=5.0V, IC=100μA, RS =1.0kΩ

f=10Hz to 15.7kHz

4.0

dB

td

VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA

35

ns

tr

VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA

35

ns

ts

VCC=3.0V, IC=10mA, IB1=IB2=1.0mA

200

ns

tf

VCC=3.0V, IC=10mA, IB1=IB2=1.0mA

50

ns

* Device is Halogen Free by design

LEAD CODE:

1) Emitter Q1

2) Base Q1

3) Collector Q2

4) Emitter Q2

5) Base Q2

6) Collector Q1

CMLT3904E

CMLT3904EG*

CMLT3906E

CMLT3906EG*

CMLT3946E

CMLT3946EG*

www.centr a lsemi.com

R6 (29-June 2015)