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DMP2002UPS Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMP2002UPS
Description  20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2002UPS Datasheet(HTML) 4 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated.
DMP2002UPS
Document number: DS37192 Rev. 4 - 2
4 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMP2002UPS
0.0014
0.0016
0.0018
0.002
0.0022
0.0024
2
6
10
14
18
22
26
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS = -2.5V
V
GS = -4.5V
V
GS = -10V
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0
2
4
6
8
10
12
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
I
D = -25A
I
D = -15A
I
D = -20A
0.001
0.0012
0.0014
0.0016
0.0018
0.002
0.0022
0.0024
0
5
10
15
20
25
30
I
D, DRAIN CURRENT(A)
Figure 5 Typical On-Resistance vs. Drain Current
and Temperature
V
GS = - 4.5V
125oC
150oC
85oC
25oC
-55oC
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with
Temperature
V
GS = -4.5V, ID = -20A
V
GS = -2.5V, ID = -15A
V
GS = -10V, ID = -25A
0.001
0.0014
0.0018
0.0022
0.0026
0.003
0.0034
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
V
GS = -10V, ID = -25A
V
GS = -4.5V, ID = -20A
V
GS = -2.5V, ID = -15A
0
0.2
0.4
0.6
0.8
1
-50
-25
0
25
50
75
100
125
150
T
A, AMBIENT TEMPERATURE (℃)
Figure 8 Gate Theshold Variation vs Ambient
Temperature
I
D = -1mA
I
D = -250µA



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