MPQ6700_15 datasheet(1/4 Pages) CENTRAL

Part #	MPQ6700

Description	SILICON COMPLEMENTARY QUAD TRANSISTOR

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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MPQ6700

SILICON

COMPLEMENTARY

QUAD TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPQ6700 is

comprised of two 2N3904 (NPN) chips and two 2N3906

(PNP) chips to be used as dual complementary

pairs for general purpose amplifier and switching

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

200

mA

Power Dissipation (per transistor)

PD

500

mW

Power Dissipation (total package)

PD

2.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (total package)

ΘJA

62.5

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=30V

50

nA

IEBO

VEB=4.0V

50

nA

BVCBO

IC=10μA

40

V

BVCEO

IC=10mA

40

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.25

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.90

V

hFE

VCE=1.0V, IC=0.1mA

30

hFE

VCE=1.0V, IC=1.0mA

50

hFE

VCE=1.0V, IC=10mA

70

fT

VCE=20V, IC=10mA, f=100MHz

200

MHz

Cob

VCB=5.0V, IE=0, f=100kHz

4.5

pF

Cib

VEB=0.5V, IC=0, f=100kHz (NPN)

8.0

pF

Cib

VEB=0.5V, IC=0, f=100kHz (PNP)

10

pF

TO-116 CASE

R1 (7-February 2014)

www.centr a lsemi.com

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