MPS6521 datasheet(1/3 Pages) CENTRAL

Part #	MPS6521

Description	SILICON NPN TRANSISTORS

PDF	3 Pages

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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MPS6520

MPS6521

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPS6520 and

MPS6521 are silicon NPN epitaxial transistors designed

for complementary amplifier applications requiring

low noise and high DC current gains. The PNP

complementary devices are MPS6522 and MPS6523

respectively.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

4.0

V

Continuous Collector Current

IC

100

mA

Power Dissipation

PD

625

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=30V

50

nA

ICBO

VCB=30V, TA=60°C

1.0

μA

BVCEO

IC=500μA

25

V

BVEBO

IE=10μA

4.0

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.5

V

fT

VCE=10V, IC=2.0mA

300

MHz

fT

VCE=10V, IC=10mA

400

MHz

Cob

VCB=10V, IE=0, f=100kHz

3.5

pF

NF

VCE=5.0V, IC=10μA,

RS=10KΩ, BW=15.7kHz,

3.0dB points @ 10Hz and 10kHz

3.0

dB

MPS6520

MPS6521

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

hFE

VCE=10V, IC=100μA

100

-

150

-

hFE

VCE=10V, IC=2.0mA

200

400

300

600

R1 (11-November 2014)

www.centr a lsemi.com

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