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CDM4-650 Datasheet(PDF) 2 Page - Central Semiconductor Corp |
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CDM4-650 Datasheet(HTML) 2 Page - Central Semiconductor Corp |
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2 / 3 page ![]() CDM4-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 4.0 AMP, 650 VOLT DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Drain 3) Source 4) Drain Pin 2 is common to the tab (4) MARKING: FULL PART NUMBER PIN CONFIGURATION ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP UNITS Qg(tot) VDS=520V, VGS=10V, ID=4.0A (Note 2) 11.4 nC Qgs VDS=520V, VGS=10V, ID=4.0A (Note 2) 3.0 nC Qgd VDS=520V, VGS=10V, ID=4.0A (Note 2) 4.7 nC td VDD=325V, ID=4.0A, RG=25Ω (Note 2) 9.0 ns tr VDD=325V, ID=4.0A, RG=25Ω (Note 2) 23 ns ts VDD=325V, ID=4.0A, RG=25Ω (Note 2) 23 ns tf VDD=325V, ID=4.0A, RG=25Ω (Note 2) 21 ns trr VGS=0, IS=4.0A, di/dt=100A/μs (Note 2) 266 ns Qrr VGS=0, IS=4.0A, di/dt=100A/μs (Note 2) 2.24 μC Notes: (2) Pulse Width < 300μs, Duty Cycle < 2% www.centr a lsemi.com R3 (2-July 2014) |
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