MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL TIP30

TIP30A TIP30B TIP30C

UNITS

Collector-Base Voltage

VCBO

40

60

80

100

V

Collector-Emitter Voltage

VCEO

40

60

80

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

1.0

A

Peak Collector Current

ICM

3.0

A

Continuous Base Current

IB

0.4

A

Power Dissipation

PD

30

W

Power Dissipation (TA=25°C)

PD

2.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICEO

VCE=30V (TIP30, TIP30A)

0.3

mA

ICEO

VCE=60V (TIP30B, TIP30C)

0.3

mA

ICES

VCE=Rated VCEO

0.2

mA

IEBO

VEB=5.0V

1.0

mA

BVCEO

IC=30mA (TIP30)

40

V

BVCEO

IC=30mA (TIP30A)

60

V

BVCEO

IC=30mA (TIP30B)

80

V

BVCEO

IC=30mA (TIP30C)

100

V

VCE(SAT)

IC=1.0A, IB=125mA

0.7

V

VBE(ON)

VCE=4.0V, IC=1.0A

1.3

V

hFE

VCE=4.0V, IC=0.2A

40

hFE

VCE=4.0V, IC=1.0A

15

75

hfe

VCE=10V, IC=0.2A, f=1.0kHz

20

fT

VCE=10V, IC=0.2A, f=1.0MHz

3.0

MHz

ton

IC=1.0A, IB1= IB2=0.1A, RL=30Ω

0.3

μs

toff

IC=1.0A, IB1= IB2=0.1A, RL=30Ω

1.0

μs

TIP30

TIP30A

TIP30B

TIP30C

SILICON

PNP POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP30 series devices

are silicon PNP epitaxial-base power transistors designed

for power amplifier and high speed switching applications.

MARKING: FULL PART NUMBER

TO-220 CASE

R1 (12-March 2014)

www.centr a lsemi.com