TIP33

TIP33A TIP33B TIP33C

MAXIMUM RATINGS: (TC=25°C)

SYMBOL TIP34

TIP34A TIP34B TIP34C

UNITS

Collector-Base Voltage

VCBO

40

60

80

100

V

Collector-Emitter Voltage

VCEO

40

60

80

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

10

A

Peak Collector Current

ICM

15

A

Continuous Base Current

IB

3.0

A

Power Dissipation (TA=25°C)

PD

3.5

W

Power Dissipation

PD

80

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

35.7

°C/W

Thermal Resistance

ΘJC

1.56

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEO

VCE=30V (TIP33, TIP33A, TIP34, TIP34A)

0.7

mA

ICEO

VCE=60V (TIP33B, TIP33C, TIP34B, TIP34C)

0.7

mA

ICES

VCE=Rated VCEO

0.4

mA

IEBO

VEB=5.0V

1.0

mA

BVCEO

IC=30mA (TIP33, TIP34)

40

V

BVCEO

IC=30mA (TIP33A, TIP34A)

60

V

BVCEO

IC=30mA (TIP33B, TIP34B)

80

V

BVCEO

IC=30mA (TIP33C, TIP34C)

100

V

VCE(SAT)

IC=3.0A, IB=0.3A

1.0

V

VCE(SAT)

IC=10A, IB=2.5A

4.0

V

VBE(ON)

VCE=4.0V, IC=3.0A

1.6

V

VBE(ON)

VCE=4.0V, IC=10A

3.0

V

hFE

VCE=4.0V, IC=1.0A

40

hFE

VCE=4.0V, IC=3.0A

20

100

hfe

VCE=10V, IC=0.5A, f=1.0kHz

20

fT

VCE=10V, IC=0.5A, f=1.0MHz

3.0

MHz

TIP33 TIP33A TIP33B TIP33C

NPN

TIP34 TIP34A TIP34B TIP34C

PNP

COMPLEMENTARY

SILICON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP33 and TIP34

series devices are complementary silicon high power

transistors manufactured by the epitaxial base process,

designed for general purpose amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-218 TRANSISTOR CASE

R1 (18-July 2013)

www.centr a lsemi.com