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RF5601 Datasheet(PDF) 2 Page - RF Micro Devices |
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RF5601 Datasheet(HTML) 2 Page - RF Micro Devices |
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2 / 9 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131029 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9 RF5601 Absolute Maximum Ratings Parameter Rating Unit DC Supply Voltage 5.5 V RF Input Power +5* dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Moisture Sensitivity MSL2 *Note: Maximum input power with a 50 Ω load in High Gain mode. Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Typical Conditions Temp = 25°C, VDD = 3.3V, LNA_EN = 3.3V, BYP_EN = 3.3V in high gain mode, BYP_EN = 0V in Bypass mode, Frequency = 4.9 GHz to 5.85 GHz unless otherwise noted Frequency 4.9 5.85 GHz DC Voltage Supply (VDD) 2.3 3.3 4.8 V LNA_EN Low 0.2 V LNA OFF. See logic table for additional control settings. LNA_EN High 2.3 3.3 VDD V LNA ON. BYP_EN control must be high simultaneously for High Gain Mode. See control table. BYP_EN Low 0.2 V Bypass mode ON. See logic table for more details. BYP_EN High 1.8 3.3 VDD V Bypass mode OFF. See logic table for more details. LNA Current LNA IDD 12 17 µA LNA in “On” state, over full DC supply range, LNA_EN supply range and over normal operating temperature range (-20°C to 75°C) 3 5 µA LNA in “Off” state, VDD = 0V; LNA_EN = 0V, BYP_EN = 0V LNA Enable 2 10 µA VDD = 2.3V to 4.8V, LNA_EN = 2.3V to 4.8V, over full frequency range, and over normal operating temperatures - 20°C to +75°C High Gain Mode Gain 9 12 15 dB Over full VDD and LNA_EN ranges, over frequency and over full temperature range from -40°C to +85°C Noise Figure Hi Gain Mode 1.8 2.6 dB Over full VDD, LNA_EN, and BYP_EN voltages, over frequency and normal operating temperatures (-20°C to +75°C) Bypass Mode Insertion Loss 5.0 7.0 dB Passband Ripple -1.0 +1.0 dB LNA is in High Gain mode, over full frequency range, over full VDD and LNA_EN voltage range Input IP3 +9 dBm High Gain mode RF Port Return Loss 9.6 15.0 dB Input and output. No external matching. |
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