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Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Ordering Information

RF MEMS

LDMOS

RF5633

SINGLE 5.0V, 3.3 TO 3.8GHZ

LINEAR POWER AMPLIFIER

The RF5633 is a linear power amplifier IC designed specifically for WiMAX

final or driver stage applications. The device is manufactured on an

advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and is

provided in a leadless chip carrier with a backside ground. The RF5633 is

designed to maintain linearity over a wide range of temperatures and

power outputs. The external match offers tunability for output power over

multiple bands. RF5633 features internal input and interstage match,

power down mode, and power detector.

Features



High Gain; 34dB



Supports Low Gain Mode



2.5% EVM WiMAX

+28dBm, 5.0V



Integrated Power Detector



Multiple Frequency Ranges

Applications



WiMAX Customer Premises

Equipment



WiMAX Access Points



IEEE 802.16 WiMAX Systems

RF5633SQ

Standard 25 piece bag

RF5633SR

Standard 100 piece reel

RF5633TR13

Standard 2500 piece reel

RF5633LPCK-410

3.4GHz to 3.6GHz WiMAX Evaluation PCBA with 5 loose pcs

RF5633HPCK-410 3.6GHz to 3.8GHz WiMAX Evaluation PCBA with 5 loose pcs

DS120213



RF5633Single

5.0V, 3.3 to

3.8GHz Linear

Power Ampli-

fier

Package Style: QFN, 24-Pin, 4mmx4mmx0.9mm