MMBF170

Document number: DS30104 Rev. 14 - 2

2 of 5

www.diodes.com

May 2014

© Diodes Incorporated

MMBF170

Characteristic

Symbol

Value

Units

Drain-Source Voltage

60

V

60

V

Gate-Source Voltage

Continuous

Pulsed

20

40

V

Drain Current (Note 5)

Continuous

Pulsed

500

800

mA

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

300

1.80

mW

mW/°C

Thermal Resistance, Junction to Ambient

417

K/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

60

70



V

Zero Gate Voltage Drain Current





1.0

µA

Gate-Body Leakage





10

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.8

2.1

3.0

V

Static Drain-Source On-Resistance









5.0

5.3

Ω

Forward Transconductance

80





mS

DYNAMIC CHARACTERISTICS

Input Capacitance



22

40

pF

Output Capacitance



11

30

pF

Reverse Transfer Capacitance



2.0

5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Time





10

ns

Turn-Off Time





10

ns

Notes:

5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.